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Product Description
Stanford Microdevices' SCA-7 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 40mA is +24dBm. These unconditionally stable amplifiers provides 21dB of gain and +12dBm of 1dB compressed power and requires only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET.
SCA-7
DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier
Product Features * High Output IP3 : +24dBm * High Gain : Up to 21dB * Cascadable 50 Ohm : 1.5:1 VSWR * Patented GaAs HBT Technology * Operates From Single Supply * Low Thermal Resistance Package Applications
Output IP3 vs. Frequency
30 28 26
50 Ohm Gain Blocks
dBm
24 22 20 0.1 1 2 3
GHz
* Cellular, PCS, CDPD * Wireless Data, SONET
U n its M in . Ty p . M ax.
Electrical Specifications at Ta = 25C
Sym bol P a r a m e te r s : T e s t C o n d itio n s : Id = 4 0 m A , Z 0 = 5 0 O h m s
GP GF P 1dB NF IP 3 TD IS O L VD d G /d T d V /d T
P o w e r G a in G a in F la tn e s s G a in F la tn e s s o v e r a n y 1 0 0 M H z b a n d O u tp u t P o w e r a t 1 d B C o m p r e s s io n : N o is e F ig u r e T h ir d O r d e r In te r c e p t P o in t O u tp u t To n e @ 0 d B m 1 0 M H z A p a r t G r o u p D e la y R e v e r s e Is o la tio n D e v ic e V o lta g e D e v ic e G a in Te m p e r a tu r e C o e ff ic ie n t D e v ic e V o lta g e Te m p e r a tu r e C o e ffic ie n t
f = 0 .1 - 2 .0 G H z f = 2 .0 - 3 .0 G H z f = 0 .1 - 2 .0 G H z f = 0 .1 - 2 .0 G H z f = 0 .1 - 3 .0 G H z f = 0 .1 - 2 .0 G H z f = 1 .9 G H z f = 0 .1 - 3 .0 G H z
dB dB dB dB dBm dB dBm psec dB V d B /d e g C m V /d e g C
18
20 18 + /- 1 . 2 + /- 0 . 1 1 2 .0 3 .8
2 3 .0
2 4 .0 100 22
3 .5
4 .0 - 0 .0 0 3 - 4 .0
4 .5
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-125
SCA-7 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25 C (Vds = 4.0V, Ids = 40mA)
|S11| vs. Frequency
0 -5 28
|S21| vs. Frequency
24
dB
-10 -15 -20 0.1 1 2 3
dB
20
16 0.1 1 2 3
GHz
GHz
|S12| vs. Frequency
-20 -22 -24 0 -5
|S22| vs. Frequency
dB
-26 -28 -30 0.1 1 2 3
dB
-10 -15 -20 0.1 1 2 3
GHz
GHz
50 Ohm Gain Blocks
Freq GHz .100 .500 .900 1.00 1.50 2.00 2.50 3.00 |S11|
Output Power vs.Frequency
14 13
dBm
12 11 10 1 2 3 4
GHz
Typical S-Parameters Vds = 4.0V, Id = 40mA
S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang
0.338 0.322 0.310 0.305 0.271 0.225 0.179 0.148
117 112 61 47 -13 -71 -129 172
13.126 13.096 12.333 12.165 11.356 10.626 9.175 8.363
139 130 93 83 38 -7 -52 -90
0.064 0.056 0.057 0.059 0.062 0.066 0.070 0.073
-19 -25 -46 -50 -79 -107 -138 -173
0.326 0.317 0.320 0.320 0.316 0.307 0.298 0.291
118 113 64 51 -9 -67 -126 177
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-126
SCA-7 DC-3 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
P a ra m e te r D e v ic e C u r r e n t P o w e r D is s ip a t io n R F In p u t P o w e r J u n c tio n Te m p e r a t u r e O p e r a tin g Te m p e r a tu r e S to r a g e Te m p e r a tu re A b s o lu t e M a x im u m 75m A 350m W 100m W +200C - 4 5 C to + 8 5 C - 6 5 C to + 1 5 0 C
+150C 10,000 +85C +120C 1,000,000 100,000
MTTF vs. Temperature @ Id = 40mA
Lead Temperature MTTF (hrs)
Thermal Resistance (Lead-Junction): 412 C/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
Recommended Bias Resistor Values Supply Voltage (Vs) Rbias (Ohms) 5V 25 7.5V 88 9V 125 12V 200 15V 275 20V 400
Mounting Instructions
The data shown was taken on a 31mil thick FR-4 board with 1 ounce of copper on both sides. The board was mounted to a baseplate with 3 screws as shown. The screws bring the top side copper temperature to the same value as the baseplate. 1. Use 1 or 2 ounce copper, if possible. 2. Solder the copper pad on the backside of the device package to the ground plane. 3. Use a large ground pad area with many plated through-holes as shown. 4. If possible, use at least one screw no more than 0.2 inch from the device package to provide a low thermal resistance path to the baseplate of the package. 5. Thermal resistance from ground lead to screws is 2 deg. C/W. Typical Biasing Configuration
50 Ohm Gain Blocks
Pin Designation 1 2 3 4 RF in GND RF out and Bias GND
Outline Drawing 1 2 4 3
SCA-7
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-127

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